Invited Speakers

• Martin ALBRECHT, Institute for Crystal Growth (IKZ), Germany
  Ga₂O₃ from materials to devices
• Antonio DI BARTOLOMEO, University of Salerno, Italy
  MoS₂ Transistors with ohmic or Schottky contacts
• Oliver BIERWAGEN, PDI, Germany - GraFOx invite
  (Fundamentals of the) Molecular Beam Epitaxy of Sesquioxides: The example of Ga2O3, and their alloy
  
• Eduard CARTIER, IBM T.J. Watson Research Center, USA
  Impact of high/k dielectric defects on the mobility and reliability of InGaAs channel MOSFETS
• Xavier GARROS, CEA-LETI, France
  Reliability of gate oxides in 3D-architectures (FinFETs, Nanowire, FETs)
• Subramanian IYER, UCLA, USA
  Approaches to memory integration in large high-performance systems
  
• Debdeep JENA, Cornell University, USA - GraFOx invited
  A Dilemma: Dielectrics for Wide-Bandgap Gallium Oxide High-Voltage Transistors
• Stephen JESSE, Oak Ridge National Laboratory, USA
  Ferroionic states: coupling between surface electrochemical and bulk ferroelectric functionalities on the nanoscale
• Pooi See LEE, Nanyang Technological University, Singapore
  Two dimensional hexagonal boron nitride thin films for flexible resistive memory
• Ivona MITROVIC, University of Liverpool, UK
  ZnO based transparent electronics
• Gang NIU, Xi´an Jiaotong University, China
  Nano-guided filament approaches for reliable RRAM
• Clemens OSTERMAIER, Infineon Technologies, Austria
  Dielectrics for GaN and GaN as dielectric: The role of Interface and bulk defects
• Oliver RADER, Helmholtz-Zentrum Berlin, Germany
  Introduction to topical insulators and their connection to ferromagnetism, ferroelectricity and strong electron corrrelation 
• Bipin RAJENDRAN, New Jersey Institute of Technology, USA
  Engineering Nanoscale Devices for Brain-inspired Computing
• David ROGERS, Nanovatio, France
  Emergent Property Sets & Applications of β-Ga₂O₃ Hetero.epilayers grown by Pulsed Laser Deposition
• Elena SAVINOVA, ICPEES, University of Strasbourg, France
  Electrochemical water splitting on Ir and Ru oxides: an insight from operando photoemission spectroscopy
• Uwe SCHRÖDER, NaMLab, Germany
  From FRAM to FeFET: Ferroelectric HfO₂ based devices and their reliability
  
• Man Hoi WONG, NICT, Japan - GraFOx invited
  Reflections on the state of ultra-wide bandgap Ga2O3 MOSFETs
• Chadwin D. YOUNG, University of Texas at Dallas, USA - GraFOx invited
  Electrical and Physical Characterization Investigation of Potential High-k Dielectrics on β-Ga₂O₃