Institut Silizium-Photovoltaik

Publikationen 2005

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  Andres, A. ; Pettenkofer, C.: Epitaxial deposition of ZnO. In: Ellmer, K.; Stadermann, G. [Eds.] : TCO für Dünnschichtsolarzellen und andere Anwendungen III : Workshop 10. - 12.04.2005 in Freyburg / UnstrutBerlin: Forschungsverbund Sonnenenergie c/o Hahn-Meitner-Institut, 2005, p. 25-27
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  Calvet, W.; Lehmann, C.; Plake, T.; Pettenkofer, C.: Epitaxial CuInS₂ on Si(111) using di-tert-butyl disulfide as sulphur precursor. Thin Solid Films 480-481 (2005), p. 347-351
  doi: 10.1016/j.tsf.2004.11.090
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  Hunger, R.; Pettenkofer, C.: Band structure investigation of chalcopyrite CuInSe₂(001) by angle-resolved photoelectron spectroscopy. In: Shafarman W. [u.a.] [Eds.] : Thin-film compound semiconductor photovoltaics : symposium held March 29 - April 1. 2005, San Francisco, California, U.S.A.Warrendale, PA.: MRS, 2005 (Materials Research Society symposium proceedings ; 865). - ISBN 978-1-55899-972-5, p. F2.2.1-F2.2.12
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  Meier U. ; Pettenkofer C.: Morphology of the Si-ZnO Interface. Applied Surface Science 252 (2005), p. 1139-1146
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  Pettenkofer, C.; Lehmann, C.; Calvet, W.: Thin CuInS₂ films prepared by MOMBE: interfaces and surface properties. In: Shafarman W. [u.a.] [Eds.] : Thin-film compound semiconductor photovoltaics : symposium held March 29 - April 1. 2005, San Francisco, California, U.S.A.Warrendale, PA.: MRS, 2005 (Materials Research Society symposium proceedings ; 865). - ISBN 1558998187, p. F5.20.1-F5.20.4
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  Rudolph R. ; Pettenkofer C. ; Bostwick A.A. ; Adams J.A. ; Ohuchi F. ; Olmstead M.A. ; Jaeckel B. ; Klein A. ; Jaegermann W.: Electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination. New Journal of Physics 7 (2005), p. 108/1-20
  http://www.njp.org/