Nowik-Boltyk, E.M.; Junghoefer, T.; Glaser, M.; Giangrisostomi, E.; Ovsyannikov, R.; Zhang, S.; Shu, C.; Rajca, A.; Calzolari, A.; Casu, M.B.: Long-Term Degradation Mechanisms in Application-Implemented Radical Thin Films. ACS Applied Materials & Interfaces 15 (2023), p. 30935-30943
10.1021/acsami.3c02057
Open Access Version
Abstract:
Blatter radical derivatives are very attractive due to their potential applications, ranging from batteries to quantum technologies. In this work, we focus on the latest insights regarding the fundamental mechanisms of radical thin film (long-term) degradation, by comparing two Blatter radical derivatives. We find that the interaction with different contaminants (such as atomic H, Ar, N, and O and molecular H2, N2, O2, H2O, and NH2) affects the chemical and magnetic properties of the thin films upon air exposure. Also, the radical-specific site, where the contaminant interaction takes place, plays a role. Atomic H and NH2 are detrimental to the magnetic properties of Blatter radicals, while the presence of molecular water influences more specifically the magnetic properties of the diradical thin films, and it is believed to be the major cause of the shorter diradical thin film lifetime in air.