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Abteilung Solarenergieoptik

Publikationen und Patente

2024

2023

2022

2021

2020

2019

2018

2017

2016

2015

2014

2013

2012

2011

C. Becker, H. Häberlein, G. Schöpe, J. Hüpkes, B. Rech. Contact resistivity measurements of the buried Si-ZnO:Al interface of polycrystalline silicon thin-film solar cells on ZnO:Al. Thin Solid Films 520, 1268 (2011).
http://dx.doi.org/10.1016/j.tsf.2011.04.197

T. Sontheimer, E. Rudigier-Voigt, M. Bockmeyer, C. Klimm, P. Schubert-Bischoff, C. Becker, B. Rech. Large-area fabrication of equidistant free-standing Si Crystals on nanoimprinted glass. physica status solidi RRL 5, 376 (2011). Cover story.
http://dx.doi.org/10.1002/pssr.201105437

T. Sontheimer, S. Scherf, C. Klimm, C. Becker, B. Rech. Characterization and control of crystal nucleation in amorphous electron beam evaporated silicon for thin film solar cells. Journal of Applied Physics 110, 063530 (2011).
http://dx.doi.org/10.1063/1.3627373

C. Becker, T. Sontheimer, S. Steffens, S. Scherf, B. Rech. Polycrystalline silicon thin films by high-rate electronbeam evaporation for photovoltaic applications – Influence of substrate texture and temperature. Energy Procedia 10, 61 (2011).
http://dx.doi.org/10.1016/j.egypro.2011.10.153

2010

S. Gall, C. Becker, K. Y. Lee, T. Sontheimer, B. Rech. Growth of polycrystalline silicon on glass for thin-film solar cells. Journal of Crystal Growth 312, 1277 (2010).
http://dx.doi.org/10.1016/j.jcrysgro.2009.12.065

M. Pagels, F. Reinhardt, B. Pollakowski, M. Roczen, C. Becker, K. Lips B. Rech, B. Kanngießer, B. Beckhoff. GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen. Nuclear Instruments and Methods in Physics Research B 268, 370 (2010).
http://dx.doi.org/10.1016/j.nimb.2009.09.009

T. Sontheimer, C. Becker, S. Gall, B. Rech. Crystal nucleation in electron-beam evaporated amorphous silicon on ZnO:Al and SiN coated glass for thin film solar cells. physica status solidi c 7, 525 (2010).
http://dx.doi.org/10.1002/pssc.200982774

2009

C. Becker, F. Ruske, T. Sontheimer, B. Gorka, U. Bloeck, S. Gall, B. Rech. Microstructure and photovoltaic performance of polycrystalline silicon thin films on temperature-stable ZnO:Al layers. Journal of Applied Physics 106, 084506 (2009).
http://dx.doi.org/10.1063/1.3240343

T. Sontheimer, C. Becker, U. Bloeck, S. Gall, B Rech. Crystallization kinetics in electron-beam evaporated amorphous silicon on ZnO:Al-coated glass for thin film solar cells. Applied Physics Letters 95, 101902 (2009).
http://dx.doi.org/10.1063/1.3222917

C. Becker, E. Conrad, P. Dogan, F. Fenske, B. Gorka, T. Hänel, K. Y. Lee, B. Rau, F. Ruske, T. Weber, M. Berginski, J. Hüpkes, S. Gall, B. Rech. Solid phase crystallization of amorphous silicon on ZnO:Al for thin film solar cells. Solar Energy Materials and Solar Cells 93, 855 (2009).
http://dx.doi.org/10.1016/j.solmat.2008.09.059

S. Gall, C. Becker, E. Conrad, P. Dogan, F. Fenske, B. Gorka, K. Y. Lee, B. Rau, F. Ruske, B. Rech. Polycrystalline silicon thin-film solar cells on glass. Solar Energy Materials and Solar Cells 93, 1004 (2009).
http://dx.doi.org/10.1016/j.solmat.2008.11.029

B. Gorka, B. Rau, P. Dogan, C. Becker, F. Ruske, S. Gall, B. Rech. Influence of Hydrogen Plasma on the Defect Passivation of Polycrystalline Si Thin Film Solar Cells. Plasma Processes and Polymers 6 , S36 (2009).
http://dx.doi.org/10.1002/ppap.200930202

2007

K. Y. Lee, C. Becker, M. Muske, F. Ruske, S. Gall, B. Rech, M. Berginski, J. Hüpkes. Temperature stability of ZnO:Al film properties for poly-Si thin-film devices. Applied Physics Letters 91, 241911 (2007).
http://dx.doi.org/10.1063/1.2824456


Patente

  • German Patent DE 10 2011 111 629.B4, Verfahren zur Herstellung periodischer kristalliner Silizium-Nanostrukturen, filed: 25.08.2011, issued: 28.02.2013, Helmholtz-Zentrum Berlin für Materialien und Energie, Inventors: C. Becker, T. Sontheimer, E. Rudigier-Voigt, M. Bockmeyer, B. Rech.
    • International Patent WO/2013/027123, Method for producing periodic crystalline silicon nanostructures, filed: 22.08.2012
    • European Patent EP 2 748 653 B1, Verfahren zur Herstellung periodischer kristalliner Silizium-Heterostrukturen, filed: 22.08.2012, issued: 13.01.2016
  • German Patent 10 2013 109 163.9, Verfahren zur Herstellung polykristalliner, 3D-Strukturen aufweisender Siliziumschichten homogener Dicke, filed: 23.08.2013, Helmholtz-Zentrum Berlin für Materialien und Energie, Inventors: D. Amkreutz, V. Preidel, B. Rech, T. Sontheimer, C. Becker
  • German Patent 10 2014 105 319.2, Verfahren zur Herstellung strukturierter Schichten mit einer photonischen Bandstruktur und Anordnung mit einer solchen Schicht, filed: 14.04.2014, Helmholtz-Zentrum Berlin für Materialien und Energie, Inventors: J. Xavier, J. Probst, P. Wyss, C. Becker
  • German Patent DE 10 2016 107 877.8, Lichtdurchlässiger Träger für einen halbleitenden Dünnschichtaufbau sowie Verfahren zur Herstellung und Anwendung des lichtdurchlässigen Trägers, filed: 28.04.2016, Helmholtz-Zentrum Berlin für Materialien und Energie, Inventors: D. Eisenhauer, G. Köppel, C. Becker, B. Rech