Mallik, N.; Hajhemati, J.; Frégnaux, M.; Coutancier, D.; Toby, A.; Zhang, S.T.; Hartmann, C.; Hüsam, E.; Saleh, A.; Vincent, T.; Fournier, O.; Wilks, R.G.; Aureau, D.; Félix, R.; Schneider, N.; Bär, M.; Schulz, P.: Interface defect formation for atomic layer deposition of SnO 2 on metal halide perovskites. Nano Energy 126 (2024), p. 109582/1-10
10.1016/j.nanoen.2024.109582
Open Accesn Version
Abstract:
With the rapidly advancing perovskite solar cell (PSC) technology, dedicated interface engineering is critical for improving device stability. Atomic layer deposition (ALD) grown metal oxide films have drawn immense attention for the fabrication of stable PSC. Despite the advantages of ALD, the deposition of metal oxides directly on bare perovskite has so far not been achieved without damaging the perovskite layer underneath. In addition, the changes to the physicochemical and electronic properties at the perovskite interface upon exposure to the ALD precursors can alter the material and hence device functionality. Herein, we report on a synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES) investigation of the interface between metal halide perovskite (MHP) absorber and ALD-SnO2 electron transport layer. We find clear evidence for the formation of new chemical species (nitrogen compound, lead dihalides) and an upward band bending in the MHP and downward band bending in the SnO2 towards the MHP/ALD-SnO2 interface. The upward bending at the interface forms an electron barrier layer of ~400 meV, which is detrimental to the PSC performance. In addition, we assess the effectiveness of introducing a thin interlayer of the organic electron transport material Phenyl-C61-butyric acid methyl ester (PCBM) between MHP and ALD-SnO2 to mitigate the effects of ALD deposition.