Calvet, W.; Lehmann, C.; Plake, T.; Pettenkofer, C.: Epitaxial CuInS2 on Si(111) using di-tert-butyl disulfide as sulphur precursor. Thin Solid Films 480-481 (2005), p. 347-351
10.1016/j.tsf.2004.11.090
Abstract:
In a new approach, we introduce a combination of chemical (CBE) and molecular beam epitaxy (MBE) of CuInS2 (CIS) on hydrogen terminated Si(111) using ditertbutyldisulfide (TBDS) as sulphur precursor. The films were analysed in situ with photo electron spectroscopy and low energy electron diffraction. Ex situ the samples are investigated by XRD and SEM. We find at growth temperatures of 300°C that no carbon is incorporated into the deposited film. Furthermore, on the In-rich side of CIS preparation we additionally observe Cu2In. However, the valence band structure remains that of typical CIS. During the growth in the Cu-rich regime segregation of Cu2S occurs which can be identified by the shifting of the valence band edge towards the Fermi level. Epitaxial growth of CIS is assumed for both regimes. LEED patterns and XRD data support the epitaxial relation Si(111)//CuInS2(112).