For the deposition of silicon-based materials such as SiO_x, SiN_x, SiC_x as well as intrinsic or p- / n-type doped a-Si:(H) or nc-Si(H) two PECVD chambers are available. The PECVDs offer heater temperatures up to 600°C and allow for the deposition on wafers up to 8 inch or custom made flipable carriers.

The sputtering chamber is equipped with a 10 inch magnetron source and offers HF powers up to 1kW (RF bias capable) or pulsed DC operation to deposit various materials including silicon, silicon oxide or TCOs. A IR heater offers deposition temperatures up to 700°C

A unique feature of this cluster is the integration of evaporation chambers for the high rate deposition of silicon up to 40 micrometres. The installed electron beam sources offer deposition rates up to 600 nm /min at substrate temperatures up to 600°C. One deposition chamber is additionally installed with a boron effusion source to deposit p-type layers. For a higher sample throughput a second evaporation chamber was installed which offers the simultaneos deposition on four 8 inch substrates.

For bulk and surface passivation of silicon the cluster is equiped with a hydrogen plasma treatment chamber. The chamber offers a direct hydrogen or deuterium plasma and RTP system to anneal samples up to 700°C 

For the integrated processing of multiple samples and combination of face-up and face-down depositions, a magazine loadlock with 12 slots and a substrate flip-station is available. For loading / unloading of a single substrate a second loadlock with preheat station is installed at the system.